Memory Endurance and Data Retention Test
EquipmentMemory Endurance and Data Retention Test
Fusion / FECBIS
Memory Endurance and Data Retention test
Introduction
Operational life test of non-volatile memory products, memory reading/writing, storage capacity evaluation, semiconductor certification criteria
Application
Unlike regular IC products, memory products are evaluated in a more specialised way by measuring the time or number of reads and writes. While manufacturers are conducting life tests in their own way, it is most important to evaluate the repetition of read/write/erase functions and how long data can be stored at high/low/room temperatures.
The Equipment
Memory Endurance and Data Retention Test
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- Manufacturer / Model
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Fusion / FECBIS
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- USE
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Operational Lifetime Testing of Non-volatile Memory Products
Evaluation of reading, writing and saving memory
Semiconductor Verification Testing Category
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- Equipment Spec
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Temperature Range: 50 ~ 150 ℃
Channel : 256
Vector Depth : 4M
Test Method
The Non-Volatile Memory Endurance & Retention test consists of 1) Endurance Test and 2) Data Retention Test. After writing and erasing the number of times specified in the Endurance test, if the product passes, the entire sample is divided into half and Retention testing is performed. For the Endurance Test, the designer (or reliability officer) must specify the pattern and the portion of be to be written/erased. Retention tests differs slightly from specification to specification. While HTSL and LTOL is used for JEDEC, HTOL and HTSL is used for AEC.
DATA EXAMPLE
Technical Use Case
Related Standards
- JESD22-A117
- AEC-A100-005