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Heat is generated when current flows against resistance from mainly metal related defects, light is emitted from the Si (MOSFET) layer due to gate related defects, and the optical beam inducted resistance change finds thermal electromotive force (EMF) generated by laser heating. Typical defects include Metal melting, Bridge short, Oxide crack, Metal particle, Migration, Contact spike, Source to Drain leakage, Gate leakage, Oxidation breakdown, ESD failure, Hot carrier generation, Latch up and etc. Since applying a voltage to the device generates heat in non-defective areas, it is necessary to check whether the detected thermal is a real spot of the defect, so it is necessary to conduct accurate additional analysis to compare it with a normal sample to distinguish whether the detect spot is normal or real. Fortunately, this equipment has a 'Thermal Lock-In System' that amplifies the real spot. It only uses the emission image detected from the Input signal, reducing noise to obtain a more accurate real spot Image.

Short-circuit of metal wirings, Abnormality of contact holes, Micro plasma leakage in oxide layer, Oxide layer breakdown TFT-LCD leakage/ Organic EL leakage localization, Observation of temperature abnormalities in devices under development process, Source to Drain Leakage, Junction Leakage, Oxidation Breakdown, ESD Failure, Hot Carrier Occurrence, Latch up occurred Point Detection